Optical demultiplexing system

ABSTRACT

Demultiplexing systems and methods are discussed which may be small and accurate without moving parts. In some cases, demultiplexing embodiments may include optical filter cavities that include filter baffles and support baffles which may be configured to minimize stray light signal detection and crosstalk. Some of the demultiplexing assembly embodiments may also be configured to efficiently detect U.V. light signals and at least partially compensate for variations in detector responsivity as a function of light signal wavelength.

RELATED APPLICATIONS

This application claims priority under 35 U.S.C. section 119(e) fromU.S. Provisional Patent Application Ser. No. 61/360,560, titled“Miniaturized Broad Spectrum Linear Array Based Optical DemultiplexingSystem”, filed Jul. 1, 2010, by J. Knapp, which is incorporated byreference herein in its entirety.

BACKGROUND

Optical filters are used in a variety of applications. For example,these devices are commonly used in a multitude of instrumentationapplications, including biomedical clinical chemistry analyzers,color-sorting instrumentation, atomic absorption spectroscopy, etc.Generally, within the instruments for these types of applications,optical filters may be positioned proximate to an optical detector andused to narrow the spectral range or bandwidth of an optical signalincident on an optical detector. Exemplary optical detectors includephotovoltaic sensors, photoconductive sensors, photomultipliers and thelike. In some cases, multiple optical filters may be used tosequentially segment a broad spectrum optical signal into discreetnarrow wavelength optical signals.

FIG. 1 shows an optical system 1 which includes an optical filter wheel3 configured to support multiple optical filters 5. Exemplary opticalfilters 5 may include bandpass filters wherein each individual filter 5supported by the filter wheel 3 may be configured to transmit apredetermined wavelength range or band of light. The optical filterwheel embodiment 3 is configured to rotate about its axis 7, thusallowing selective positioning of each optical filter disposed on thewheel. The wheel may be selectively positioned to put a desired opticalfilter in a location in which the optical filter is configured totransmit light of a narrow spectral range therethrough to an opticaldetector 9. As a result, a broad spectral optical signal 11 may besequentially reconfigured to a plurality of narrow spectral signals 13corresponding to each of the optical filters 5. While these opticalfilter wheel-based spectral analysis device configurations have provenuseful, a number of shortcomings have been identified. For example, themeasurement process using a wheel based system as shown in FIG. 1 tendsto be a labor intensive, time consuming process due to the need tomechanically rotate the filter wheel 3. In addition, such filter wheelbased systems tend to be physically large devices, beelectro-mechanically complex, offer limited longevity, and be expensiveto purchase and maintain.

Various other optical demultiplexing configurations have also beendeveloped. As shown in FIG. 2, some demultiplexing systems 19 directincident light 21 to a planar dichroic beam splitter 23A which splitsthis light into two spectral signals. The reflected spectral signal isdirected through an optical filter 25 and ultimately to a sensor 27. Thetransmitted spectral signal is transmitted through the dichroic beamsplitter 23A to a subsequent dichroic beam splitter 23B which similarlyrepeats a spectral division of the incident light directing a portion ofthe signal to a detector while transmitting a portion of the incidentlight to subsequent dichroic beam splitters. The various dichroic beamsplitters 23 may be configured to reflect a discreet spectral potion ofthe incident signal. Each dichroic beam splitter 23/bandpass filter 25pair may be referred to as a “channel”. Each channel may have adedicated optical sensor or photo sensor 27 which may include aphotodiode, a photomultiplier tube (PMT), or the like, which is used toanalyze the incident light having a discreet wavelength or spectral bandas determined by the dichroic beam splitter 23 and bandpass filter 25.

For the embodiment shown, the entire unit may be contained within ahousing 29. In this example, the device includes 6 wavelength channels,but the number of channels may be dependent upon the instrument'sparticular application. While these systems offer some advantages overthe filter wheel systems described above, a number of shortcomings havebeen identified. For example, optical cross-talk between neighboringchannels of dichroic beam splitter 23/bandpass filter 25 pairs may beproblematic. This phenomenon may significantly reduce precision of thedevice and may also introduce measurement error. To reduce or minimizethis deleterious effect, channels of such embodiments are oftenphysically spaced far away from each other. Unfortunately, this type ofphysical spacing along with the common use of large dedicatedphoto-sensors for this type of embodiment (typical 0.5 inch diametersilicon photodiodes are often used), results in a device configurationthat is large (typically 6 inches to 18 inches in length), heavy, andcostly. In addition, the long length of these devices may reduce theaccuracy of light imaging onto each sensor 27 due todivergence/convergence of the incident light. Minor vibrations of thisdevice might also affect this imaging accuracy. The results may be poorperformance, including unstable signal drift, excessive noise andcrosstalk in some cases.

In contrast to an optical filter-filter based system, numerousdemultiplexing configurations which use an optical grating in lieu ofoptical filters have been developed. These systems utilize lightreflected from a diffraction grating to either discreet photodiodes, oralternatively, a compact linear diode array. While systems based onoptical gratings offer some advantages over filter-based systems, anumber of shortcomings have been identified. For example, cost is amajor shortcoming for a grating based configuration. Expensive highquality gratings tend to work well in most applications, however, forapplications requiring the lowest possible cost and simplicity, lessexpensive gratings tend to be of limited quality. In such cases,grating-to-grating repeatability may be poor and signal-to-noise andoptical density (OD) may be less than ideal. For example, somesingle-grating demultiplexing systems may be limited to about 2.5 OD.Other shortcomings may include high sensitivity to optical alignment,mechanical complexity, and a high sensitivity to operating temperatures.

With regard to optical detection in the wavelength range of 330 nm-1200nm, bandpass filters are typically manufactured with a cost-effectivelaminated construction, consisting of absorptive color glasses or dyes,along with transparent glasses having deposited onto them variousmultilayer optical interference coatings. Standard 10 mm diameteroptical filters of this type have good optical performance(typically >70% transmission) and cost about $15 each. For somebiomedical and measurement/control applications though, opticaldetection in the shorter ultraviolet (U.V.) wavelength band, forexample, in an optical band having a wavelength of about 230 nm to about320 nm, may be desired. In this U.V. light wavelength range, suchstandard low-cost laminated optical filters may not be suitable due tooptical absorption by the laminating epoxies and the lack of colorglasses and dyes within this wavelength range. Rather, such filters foruse in the ultraviolet spectrum are typically produced with air-gapmetal-dielectric-metal (MDM) type designs. Such MDM filters aretypically free from optically absorbing epoxies and, as such, offerimproved lifetimes and performance over epoxy-based designs when exposedto ultraviolet light.

FIG. 3 shows the cross-section of an ultraviolet MDM type opticalbandpass filter embodiment. As shown, the MDM filter device 33 includesa housing 35 to support fused silica substrates 37. An optical coating39, usually including alternating layers of cryolite and aluminum, maybe applied to the substrates 37 and may serve to define the opticalfilter's pass band (e.g. having a center-wavelength within theultraviolet light wavelength region of about 200 nm to about 320 nm anda half bandwidth of nominally 8 nm to about 12 nm). The coating 39 mayalso serve to reject all out-of-band light up to at least about 1200 nmat a level of typically 4 OD. A hermetic seal 41 may be used to protectthe environmentally sensitive coating 39, since the coating 39 istypically water soluble. During use, a failure of the hermetic seal 41will generally lead to rapid degradation of the optical coating 39 andeventual field failure of the MDM filter device 33. Some of thedisadvantages of filters of this type is that they tend to be large(typically no smaller than 0.5 inch diameter), thick (about 5 mmnominal) and they are also costly (about $200 each in some cases).

FIG. 4 is a graphical representation showing a net opticalfilter/detector responsivity in Amps per Watt (A/W) in theaforementioned ultraviolet (UV) light wavelength range of about 200 nmto about 320 nm for a typical optical filter/detector embodiment. Forillustrative purposes, FIG. 4 shows the performance of a 270 nm MDMfilter when matched with a standard silicon (Si) photodiode opticaldetector. In this wavelength range, typical UV-enhanced siliconphotodiodes may have a responsivity of about 0.08 A/W. As illustrated inFIG. 4, the net responsivity of this optical filter/detector combinationembodiment is about 0.01 NW.

As discussed above, existing multi-channel optical analyzers are useful,but have a variety of shortcomings. What has been needed are opticaldemultiplexing systems that may be miniaturized, may be manufactured fora cost effective price, are able to maintain optical precision andreliability or any combination of thereof.

SUMMARY

Some embodiments of an optical demultiplexing device may include atleast one array of photo detector elements (rather than discreetsensors) and a demultiplexing assembly. The demultiplexing assembly maybe optically coupled to the array and include multiple optical channelswith each optical channel formed from at least one bandpass reflectorand at least one optical filter. Each bandpass reflector may be disposedsubstantially along an input signal axis of the demultiplexing assemblyand each channel may be configured to transmit an optical signal withina selected wavelength range to an active portion of the array of photodetector elements. The active portion of the array may also be isolatedfrom active portions of photo detector elements of adjacent channels.

Some embodiments of an optical demultiplexing device may include atleast one array of photo detector elements and a demultiplexingassembly. In some cases, the array of photo detector elements may be acontinuous array of photo detector elements. The demultiplexing assemblymay be optically coupled to the array of photo detector elements andinclude a plurality of optical channels with each optical channel formedfrom at least one bandpass reflector and at least one bandpass filter.The bandpass filter may be disposed in an optical filter cavity of abaffle assembly with the optical filter cavity being at least partiallybounded by a support baffle disposed over an output surface of thefilter. The support baffle may also include an output aperture. Thebaffle assembly may also include a filter baffle disposed between thefilter cavity and an adjacent optical channel.

Some embodiments of an optical demultiplexing system include a firstmodule which is in optical communication with a light signal and whichincludes a UV light detector array that is configured to detect UV lightbut not light having a wavelength greater than about 425 nm. The firstmodule also includes an all dielectric bandpass filter for each opticalchannel therein. A second module may also be disposed in opticalcommunication with the light signal and include a visible light detectorarray that is configured to detect a broad band of light signal andwhich includes an all dielectric bandpass filter for each opticalchannel.

Some embodiments of a method of demultiplexing and analyzing a lightsignal may include propagating a broad band white light signal through asample to a first bandpass reflector of a demultiplexing assembly andreflecting a first spectral band of the light signal from the firstbandpass reflector. The first spectral band may then be propagatedthrough a first band pass filter of the demultiplexing assembly. Theremaining spectra of light may be transmitted through the first bandpassreflector and propagated to a second bandpass reflector. A secondspectral band of the light signal may then be reflected from the secondbandpass reflector and propagated through a second band pass filter ofthe demultiplexing assembly. An amplitude of the first spectral band maybe detected with a first active portion of a linear array of photodetectors after the first spectral band has passed through the firstband pass filter. An amplitude of the second spectral band may bedetected with a second active portion of the linear array of photodetectors after the second spectral band has passed through the secondband pass filter.

Some embodiments of an optical demultiplexing device may include atleast one continuous array of photo detector elements and ademultiplexing assembly. The demultiplexing assembly may be opticallycoupled to the array and the demultiplexing assembly may includemultiple optical channels, each channel configured to transmit anoptical signal within a selected wavelength range to an active portionof the array of photo detector elements which is isolated from activeportions of photo detector elements of adjacent channels.

Certain embodiments are described further in the following description,examples, claims and drawings. These features of embodiments will becomemore apparent from the following detailed description when taken inconjunction with the accompanying exemplary drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings illustrate embodiments of the technology and are notlimiting. For clarity and ease of illustration, the drawings may not bemade to scale and, in some instances, various aspects may be shownexaggerated or enlarged to facilitate an understanding of particularembodiments.

FIG. 1 shows an embodiment of an optical filter wheel.

FIG. 2 shows an embodiment of an optical demultiplexing system withindividual photo detectors for each channel.

FIG. 3 shows a UV optical bandpass filter embodiment.

FIG. 4 is a graphical representation of a responsivity of a typicalfinal optical filter/optical detector embodiment.

FIG. 5 is a perspective view of a demultiplexing system embodimentincluding a housing and linear photo detector array which is coupled toa pin receptacle of a PC board which is in operative communication withan optional processor and display unit.

FIG. 6 shows the demultiplexing system embodiment of FIG. 5 inconjunction with a light signal source including a light sourceconfigured to transmit light through a material sample and into anentrance pupil of the housing.

FIG. 6A is a schematic elevation view of the demultiplexing systemembodiment of FIG. 5 having 9 optical channels.

FIG. 7 is a perspective view of the demultiplexing system embodiment ofFIG. 6A including a housing and linear photo detector array.

FIG. 7A is a perspective view of a linear photo detector array assembly.

FIG. 7B is a perspective view of a CCD chip type photo detector arrayassembly.

FIG. 7C is an enlarged view of an encircled portion of the photodetector array of the assembly in FIG. 7B.

FIG. 8 is a top view of an optical baffle assembly embodiment.

FIG. 9 is a side view of the baffle assembly embodiment of FIG. 8.

FIG. 10 is an enlarged view in section of the baffle assembly of FIG. 9taken along lines 10-10 of FIG. 9.

FIG. 11 is an elevation view of a bandpass reflector mount assembly.

FIG. 12 is a top view of the bandpass reflector mount assembly of FIG.11.

FIG. 13 is a schematic elevation view of a demultiplexing systemembodiment having 14 optical channels.

FIG. 14 is an enlarged view in partial section of the demultiplexingsystem of FIG. 13.

FIG. 15 shows a cross-sectional view of a low-cost single substrate UVfilter embodiment.

FIG. 16 is a graphical representation of a responsivity of an embodimentof a final optical filter/photo detector.

FIG. 17 shows an embodiment of a demultiplexing system including a UVcompatible module having a Silicon Carbide (SiC) based linear array anda Si based linear photo detector array for use within the visiblepositioned along the same optical axis.

FIG. 18 shows an embodiment of a compact demultiplexing system thatincludes a SiC linear array for a U.V. module and a Si linear photodetector array for a visible module positioned adjacent each other toachieve a full 230 nm-1200 nm wavelength detection configuration (aninfrared optical array may be employed to extend this wavelength rangeto about 4500 nm).

FIG. 19 shows an embodiment of a compact demultiplexing system thatincludes an array of individual SiC photo detectors for a U.V. moduleand a Si linear photo detectors array for a visible module positionedadjacent each other to achieve a full 230 nm-1200 nm wavelengthdetection configuration (an infrared optical array may be employed toextend this wavelength range to about 4500 nm).

DETAILED DESCRIPTION

FIGS. 5-12 illustrate an embodiment of an improved performanceminiaturized optical demultiplexing (hereinafter “MINI DEMUX”) device.As shown, the MINI DEMUX device 60 includes at least one photo detectorarray which may be in the form of a linear photo detector array having aplurality of detector elements. Such a linear array may include acompact photodiode array 62 wherein each detector element or diode ofthe array may be disposed along a continuous linear configuration. Insome cases, such continuous linear array configurations 62 may have eachphoto detector element thereof in contact or near contact with adjacentphoto detector elements of the array 62. The photodiode array 62 mayhave at least one demultiplexing (hereinafter “DEMUX”) assembly affixedthereto. In some cases, the photodiode array 62 may include a HamamatsuS-4111-35Q device having a length L, as shown in FIG. 7. In s somecases, the length L of the linear array may be less than about 3 inches,more specifically, less than about 2 inches. The Hamamatsu device, modelS-4111-35Q and similar models are manufactured by Hamamatsu PhotonicsCorporation at 325-6, Sunayama-cho, Naka-ku, Hamamatsu City, ShizuokaPref., 430-8587, Japan. Optionally, any variety of suitable photodiodedevices or other photo detector devices in any variety of lengths,widths, or other transverse dimensions may be used.

The number of continuous or sequentially adjacent photo detectorelements for the array 62 or any other array discussed below may haveany suitable number of detector elements 72. For example, some arrayembodiments 62 may have about 10 detector elements 72 to about 100detector elements 72 or more, more specifically, about 20 detectorelements to about 50 detector elements, and even more specifically,about 30 detector elements to about 40 detector elements. An example ofsuch a linear photo detector array 62 is shown in FIG. 7A. A suitablephoto detector array 62 may also include embodiments in which thedetector elements are not configured as a linear array, but are insteadconfigured as a two dimensional array, such as might be found in acharged couple device (CCD) chip embodiment. FIGS. 7B and 7C illustratean embodiment of a CCD type chip detector array 62′ that has a pluralityof detector elements 72′ arranged in a two dimensional matrix. The pinconfiguration and electrical coupling of the CCD chip 62′may be the sameas or similar to that of the linear array 62. For some embodiments ofthe photo detector arrays 62 and 62′, the size of each photo detectorelement 72 or 72′ may be small, for example, such detector elements 72or 72′ may have a transverse dimension of an input surface of about 1 mmto about 4 mm. As such, an array 62 suitable for a device 60 havingabout 8 channels to about 10 channels may have about 35 such detectorelements 72 disposed in a linear array with an overall length of lessthan about 3 inches, more specifically, less than about 2 inches. Thedetector elements 72 or 72′ may be configured to detect light andconvert the incident light energy to electrical energy for a variety ofwavelengths. In some cases, each photo detector element may beconfigured to convert incident light energy into a voltage that isproportional to or otherwise dependent on an amplitude or intensity oflight incident thereon. In general, some array photo detector elementembodiments 72 or 72′ may be configured to detect and convert lighthaving a wavelength of about 230 nm to about 4500 nm, more specifically,about 340 nm to about 1200 nm, as well as other wavelengths in somecases.

In some cases, the DEMUX assembly 64 as shown in FIG. 7 may beadhesively bonded to a face of the photodiode array 62. Optionally, anyvariety of techniques or devices may be used to affix the DEMUX assembly64 to the photodiode array 62, including, without limitations,mechanical coupling, fasteners, housings, soldering, brazing, adhesives,and the like. In some embodiments, the DEMUX assembly 64 may benon-detachably coupled to the photodiode array 62. Optionally, the DEMUXassembly 64 may be detachably coupled to the photodiode array 62.

As shown in FIG. 5, the MINI DEMUX device 60 may, in some cases, beelectrically coupled to a printed circuit (PC) board 63 through a pinreceptacle 65 that is electrically coupled to the PC board 63. The array62 may be coupled to the pin receptacle 65 by conductor pins 68 whichextend from the array 62 and into plugs on the receptacle 65. The PCboard 63 may include a variety of electrical circuitry which is inelectrical communication with the compact photodiode array 62. Theelectronic circuitry of the PC board 63 may include signal amplifiers 67and the like which may be configured to amplify output voltages of thephoto detector elements 72 of the array 62. The PC board 63 may alsooptionally be in electrical or informational communication with aprocessor and or display device 63A. The processor 63A may include acomputer and display monitor in some embodiments. One or more connectiondevices 68 may be formed on or in communication with the photodiodearray 62. In some embodiments, the connection devices 68 comprise pinspermitting the photodiode array 62 to be electrically coupled to asubstrate such as, for example, PC board 63 or receptacle 65.

Referring again to FIG. 5, the DEMUX assembly 64 includes a housingforming an enclosure having one or more input apertures 66 configured toreceive at least one optical light signal 65A therein. For someembodiments, the housing forms an enclosure surrounding the componentsof the DEMUX assembly 64 which may prevent or reduce unwanted noise orlight signal contact with the components of DEMUX assembly 64. Any ofthe device embodiments as shown in FIGS. 5-19 discussed herein may alsoreceive a plurality of such optical or light signals 65A, such as two,three, four, five or more light signals 65A. FIG. 6 shows a schematicview of one possible arrangement of the MINI DEMUX device 60 incommunication with a light signal 65A whereby the light signal 65A isgenerated by passing light 66A from a light source 67A through amaterial sample 68A. However, any suitable light signal may be analyzedby the device 60 regardless of source. In some embodiments, the lightsource 67A may include a broad spectrum light source such as a Xenon orHalogen type bulb. The light signal may also be collimated or partiallycollimated in some cases prior to entering an input aperture 66 of thedevice 60. The light signal 65A enters the input aperture 66 along aninput axis as shown in FIG. 6A.

FIG. 6A shows a schematic representation of the MINI DEMUX device 60 inuse. As shown, the photodiode array 60 of the MINI DEMUX devices 60 mayinclude multiple photo detector elements 72. The photo detector elements72 are arranged linearly for the embodiment shown in FIG. 6A.Optionally, the photo detector elements 72 may be arranged in anyvariety of configurations. Further, the photodiode array 60 may includea window 74 positioned thereon. As such, the photo detector elements 72may be positioned within a hermetic seal by the window 74. As shown, thelight signal 65A enters the device 60 along an input axis 74A which maycontinue linearly through the body of the demultiplexing assembly.

A subassembly such as baffle assembly 76 as shown in FIGS. 8-10 may beconfigured to support at least one optical filter 78 proximate to atleast one photo detector element 72 of the device 60. For someembodiments, each optical filter 78 may be configured as a bandpassfilter 78 to pass a predefined narrow spectral band of light as may beneeded for a desired application. For example, a first bandpass filter78 may be configured to transmit light having a wavelength band centeredat about 340 nm, while a second adjacent optical filter 78 may beconfigured to transmit light having a center wavelength of about 380 nmtherethrough. As such, a series of optical bandpass filters 78 may beconfigured to individually transmit light having wavelengths centered atabout 340 nm, 380 nm, 405 nm, 510 nm, 546 nm, 578 nm, 620 nm, 630 nm,670 nm, 700 nm or 800 nm therethrough. In some cases, optical bandpassfilters 78 may be configured and arranged so as to transmit the shortestwavelength band of the device to a channel closest to the input aperture66 (i.e. filter 78′) with subsequent optical bandpass filters 78 alongthe light signal path configured to transmit light of bands havingsequentially increasing wavelength centers therethrough. In particular,filter 78′ may be configured to transmit or pass a light band centeredat about 340 nm, the next channel may be centered at about 380 nm, thenext channel at 405 nm and so on. The wavelength band selectivity ofeach bandpass filter 78 may also function in conjunction with aselective reflectivity of each corresponding bandpass reflector 92 todefine the spectral band for each channel of the demultiplexingassembly. In particular, in some cases, it may be desirable for both thebandpass reflector 92 and bandpass filter 78 to selectively narrow thespectral bandwidth of an incident beam (narrow the band at varyinglevels or amounts). Embodiments of such a demultiplexing device and anyothers discussed below may include the channel wavelengths discussedabove, but may also include any appropriate number of channels havingwhich may be configured to pass any desired spectral bandwidth centeredat any desired wavelength, depending on the particular application.

In addition, for some embodiments, it may be desirable for the bandpassreflector 92 to reflect a predetermined band of light in a wavelengthrange that is broader than the ultimate band of the optical channel. Theultimate bandwidth of the channel may be refined or fine tuned by thecorresponding bandpass filter 78 of the channel that passes a band oflight at the desired range of wavelength for detection by the photodetectors 72 of the array 62. For the 340 nm channel discussed above,the bandpass reflector 92 might reflect a relatively broad sub-band ofthe input light signal of about 315 nm to about 360 nm, while passingthe remaining band via transmission to the next bandpass reflector 92 inthe optical train in some cases. In such a case, the 315 nm to 360 nmband encompasses or includes the ultimate desired band of the channel,but is broader and can be carried out with a less precise optic. The 315nm to 360 nm band then propagates to the corresponding bandpass filter78 of the channel disposed along an output axis of the bandpassreflector 92. The bandpass filter 78 then further narrows the band ofthe channel to the desired final spectral band for analysis, which maybe about 335 nm to about 345 nm, with a center wavelength at thepreselected 340 nm. Such a configuration may be useful for a variety ofreasons. In particular, this configuration directs only wavelengths ofinterest to the bandpass filter 78 of a particular channel. Such aconfiguration may also allow the use of bandpass reflector 92 with alower level of precision to be used, as the bandpass filter 78 willperform the final adjustment. In embodiments of the demultiplexing arraywhere high precision components are desired, a bandpass filter 78 suchas the model SSBF-340 (or the like) or bandpass reflector 92 such as themodel SSBF-DC-340 (or the like), manufactured by Newport Corporation,Corion Products, 8 East Forge Parkway, Franklin, Mass. may be used.

In some cases, the bandpass reflector 92 may be configured to pass abandwidth that is about 2 times to about 4 times the bandwidth of thecorresponding bandpass filter 78. In addition, the manufacturingbandwidth or performance tolerances of the bandpass reflector 92 may begreater than those of the bandpass filters 78 for some embodiments. Forexample, in some cases, the bandwidth tolerances of the bandpassreflector 92 may be plus or minus about 5 nm, while the tolerance of thebandpass filters 78 may be plus or minus about 2 nm. As such, for someembodiments, a bandpass reflector 92 of an optical channel may reflect alight band having a width of less than about 50 nm, while thecorresponding bandpass filter 78 of the same channel may further narrowthe light signal to a bandwidth of less than about 15 nm, morespecifically, less than about 12 nm, and even more specifically, lessthan about 10 nm. These parameters discussed above may also beapplicable to all of the 380 nm, 405 nm, 510 nm, 546 nm, 578 nm, 620 nm,630 nm, 670 nm, 700 nm or 800 nm channels, as well as any other suitablewavelength.

For some embodiments, very high precision bandpass reflectors 92 may beused without the use of bandpass filters 78 at all to form an opticalchannel of a demultiplexing assembly. In such embodiments, thesereflectors 92 may reflect only a precise narrow wavelength range, suchas the bands previously discussed above with regard to the bandpassfilters 78. For example, the reflection bandwidth of a 340 nm bandpassreflector 92 may be configured to be about 10 nm (such as discussedabove with regard to a 340 nm bandpass filter 78). This narrow spectralband may then be directed onto an appropriate exposed detector arrayelement or elements 72. In this lower-cost configuration, optimaloptical linearity and crosstalk may not be at the performance level ofthose configurations employing both bandpass reflectors 92 and bandpassfilters 78, but may be adequate for particular application (nominal 2.5OD versus 4.5 OD performance).

In addition, an opposite approach may be used wherein the bandpassreflectors 92 are configured with little or no spectral functioning, butmerely serve to reflect or otherwise redirect a desired percentage ofthe incoming light signal in a lateral direction away from the lightsignal axis, through a bandpass filter 78, and on to one or morecorresponding photo detector elements 72. In such an embodiment, all ormost of the spectral narrowing function would be carried out thebandpass filter 78 of an optical channel of the assembly prior topropagating the signal to the array 62 for detection. For someembodiments of such a configuration, the bandpass reflectors 92 may becompletely omitted from the demultiplexing assembly and the light signalallowed to internally reflect in a somewhat random pattern within aninterior volume of the demultiplexing housing of the assembly untilportions of the light signal pass through a bandpass filter 78 of anoptical channel and are thereafter detected by the array 62. For suchembodiments, it may also be desirable for an interior surface of theinterior volume 94 of the housing 97 of the demultiplexing assembly tobe coated with a reflective coating or otherwise include a surface thatis reflective to the light signal to minimize absorption of the lightsignal by the interior surface of the housing 97.

In addition to optionally being configured to generate the shortestwavelength of light signal passed to the array 62, the first channelclosest to the input aperture 66 corresponding to filter 78′ as shown inFIG. 6A may also have a larger aperture 85′ in a support baffle thereofand be configured to transmit a light signal of the shorter wavelengthto a larger area of the photo detector array 62 relative to that ofadjacent channels. Regarding the bandwidth of the wavelength channelscorresponding to wavelengths of about 340 nm, 380 nm, 405 nm, 510 nm,546 nm, 578 nm, 620 nm, 630 nm, 670 nm, 700 nm or 800 nm, these may beselected based on the particular application of the MINI DEMUX device60. In addition to being able to select any desired center wavelengthfor a particular channel, the bandwidth may also be selected in order tobe narrow enough to provide a desired resolution and broad enough toallow a desired amount of signal to pass through the filter. Thebandwidth may also be used to accommodate a varied responsivity of thedetector array 62 as a function of wavelength. That is, channels havingwavelengths with lower responsivity may be selected to have a broaderbandwidth in order to allow more signal to pass through the filter 78 tothe detector array 62. In some particular exemplary embodiments, thewavelength bands discussed above may be about 6 nm to about 12 nm, morespecifically, about 8 nm to about 10 nm.

Referring again to FIGS. 8-10, the MINI DEMUX device 60 may includemultiple baffles to reduce or prevent measurement error. For example,each channel of the demultiplexing assembly of the device 60 may includeone or more support baffles 80 and one or more filter baffles 84 whichmay be part of an integral baffle assembly 76. The support baffles 80may include a support surface 82 configured to provide a ledge disposedabout a bottom portion of each filter cavity and engage and support theoptical filters 78. As such, in some cases, a bottom surface of thebandpass filter 78 may be in contact with the support surface 82 of thecorresponding support baffle 80 as shown in FIG. 10. The support baffles80 may also include an aperture 85. The baffles 80 and 84 may beconfigured to reduce or eliminate “bleed-by”, i.e., extraneous lightfrom traveling around each optical filter 78 (which could significantlyintroduce measurement error). Further, in order to maximize or otherwisecontrol output signal, the aperture 85 of the support baffle 80 of eachoptical filter 78 may be sized to transmit light to one or more detectorelements 72 of the array 62. For some embodiments, to help isolate eachchannel (thus reducing or preventing crosstalk), one or more inactivephoto detector elements 72 may separate each one or more active photodetector elements 72, thus creating active portions of the array andinactive portions of the array as discussed in more detail below withregard to the embodiment of FIGS. 13 and 14. In some cases, the inactiveportions of the array may include one or more photo detector elements 72that are grounded. As such, the connectors 68 associated with theinactive portion or region may be left coupled to ground or eliminated.In some cases, the active portion of an array 62 onto which an aperture85 is configured to project a light signal may include one detectorelement or a plurality of detector elements. For some particularembodiments, each active region of three photo detector elements may beseparated by a single inactive photo detector element, however, anysuitable or desirable configuration may be used in this regard.

The filter baffles 84 may be positioned between the optical bandpassfilters 78 such that they are disposed in a gap formed between thelateral sides of optical bandpass filters 78 which are adjacent eachother. In some cases, the filter baffles may be in contact with thelateral sides of the bandpass filters, in other embodiments, there maybe a gap between an outer surface of the filter baffle 84 and theadjacent bandpass filter 78. For some configurations, the support baffle80 and filter baffle 84 of each channel in combination with adjacentportions of the walls of the housing may form a filter cavity. Such afilter cavity may be configured to restrict light incident on the activeportion of the array of the channel to the band corresponding to thatchannel. As such, the filter baffles 84 optically isolate the opticalfilters 78 and active detector regions 86 from scattered, misdirected,or unwanted light from neighboring optical channels, thereby improvingmeasurement accuracy over prior art devices. The filter baffles 84 maybe manufactured from any variety of materials in a variety ofconfigurations so long as they provide a barrier disposed betweenadjacent filter elements 78 that a light signal 65A can not passthrough. Matt black anodized aluminum may be used for the baffleembodiments 80 and 84 in some cases. As shown in FIGS. 9-10, the filterbaffles 84 may be configured to have a continuous structure with respectto the support baffles 80. In some instances, a bottom edge of thefilter baffles 84 may be disposed on or continuous with a top surface ofa corresponding adjacent support baffle 80 such that no gap exists therebetween and no portion of a light signal 65A may pass between the filterbaffle 84 and support baffle 80.

For the baffle assembly embodiment 76 shown in FIGS. 8-10, the baffleassembly 76 may be in the form of a continuous monolithic structure thatincludes a base plate and the baffle structures thereon formed from asingle piece of material. In some cases, such an assembly 76 may bemachined from a single piece of aluminum or other suitable material. Asshown in FIG. 10, the filter baffles 84 may also extend vertically abovean input surface of the adjacent corresponding filter 78 so as toprevent transmission of light that is reflected or scattered from onefilter 78 to adjacent channels.

Referring again to FIG. 6A, at least one bandpass reflector such as adichroic beam splitter 92 may be positioned within the cavity 94 formedwithin a housing of the MINI DEMUX device 60 for each channel of thedevice 60. Each bandpass reflector 92 may be disposed adjacent to and inoptical communication with a corresponding filter 78 for each channel ofthe device 60. For some embodiments, the bandpass reflector 92 mayinclude a dichroic mirror configured to reflect a desired wavelengthband of a light signal 65A in a lateral orientation away from the inputaxis 74A of the light signal 65A and towards the optical filter 78,while transmitting substantially all light outside the desiredwavelength band therethrough along the input axis and optionally on tothe next bandpass reflector 92 in the optical train of thedemultiplexing assembly. A variety of devices may be used as bandpassreflectors, including, without limitation, mirrors including dichroicmirrors optical filters, gratings, and the like. In some instances, anoptical filter 78 and corresponding adjacent bandpass reflector 92 ofthe same channel for each channel of a device 60 may be wavelengthmatched, thereby transmitting a narrow bandwidth of light therethroughto the array 62 for detection and intensity measurement of each band orchannel. For the dichroic beam splitter embodiments of the bandpassreflector 92 shown in FIG. 11, as well as other embodiments, eachbandpass reflector 92 may have a plate-like configuration and bedisposed at an angle of about 45 degrees relative to the input signalaxis 74A. In some cases, the bandpass reflectors 92 may be disposed atan angle of about 42 degrees to about 48 degrees with respect to theinput signal axis 74A. Each bandpass reflector 92 may also be firmlyheld in place at a desired angle with respect to the input signal axis74A in a corresponding slot 93 of a housing portion or side panel 95 ofthe housing 97 of the demultiplexing assembly as shown in FIGS. 11 and12. Generally, each of the slots 93 in the side panel 95 of the housing97 may be substantially parallel to each other as will the bandpassreflectors 92 disposed therein, although this is not essential. Thebandpass reflector slots 93 of the side panel 95 of the housing 97 mayalso be laterally offset in a sequential format shown as a dichroicoffset in FIG. 11 and discussed in more detail below.

As a result of this configuration, the bandpass reflector 92, opticalfilter 78 and adjacent corresponding active region 86 of the photodiodearray 62 may form or define an optical channel of the device 60. Thebandpass reflectors 92 may be collinearly aligned in some cases. In someembodiments, the bandpass reflectors 92 need not be collinearly aligned.For example, if dichroic beam splitters are used for the bandpassreflectors 92, each device 92 may be laterally offset slightly relativeto each adjacent bandpass reflector 92 in order to accommodate thedisplacement of the light signal as it is refracted by the bandpassreflector 92. As shown in FIG. 11 and in later embodiments in FIG. 14,the bandpass reflectors 92 and 192 may be configured with a dichroicoffset and may be sequentially offset in a lateral orientation slightlyalong the input axis to accommodate a lateral shift in the light signalin the direction of the tilt of the bandpass reflector 92. The shift inthe light signal occurs as the light signal passes or refracts througheach bandpass reflector 92 with an altered internal angle due to theindex mismatch of the bandpass reflector 92 and surrounding air. Theamount of the lateral shift relative to the axis 74A may be primarilydependent on the thickness of the bandpass reflector 92. The overall orcumulative dichroic shift from the first bandpass reflector 92 to thelast bandpass reflector 92 along the optical path or train of the inputaxis 74A may be substantial as shown in FIG. 11. For a 9 channel MINIDEMUX device 60 such as shown in FIGS. 5-12, having an overall length ofless than about 2 to 3 inches, each bandpass reflector 92 may beseparated from adjacent bandpass reflectors 92 by a distance of lessthan about 4 mm in some cases. In addition, each active portion of thearray 62 may have a center which is separated from a center of anadjacent active portion by a distance of less than about 1 mm for someembodiments.

For some embodiments, during use, a light signal 65A enters the inputaperture 66 of the demultiplexing assembly 64 and propagates to an inputsurface 99 of a first bandpass reflector 92 along the input axis 74A asshown in FIG. 6A. The first bandpass reflector embodiment 92 may be inthe form of first dichroic beam splitter 92 which, as discussed above,reflects a first spectral band of the light signal from an input surfacethereof such that the beam of the first spectral band may be directedlaterally away from light signal axis 74A. For some embodiments, thefirst spectral band may be the shortest wavelength band of all channelsof the device 60. The reflected first spectral band then propagatesthrough a first band pass filter 78′ of the demultiplexing assembly 64.Also as discussed above, the first bandpass filter 78′ may be largerthan the subsequent bandpass filter 78 disposed adjacent thereto. Theaperture 85′ is disposed in the support baffle 80 below the firstbandpass filter 78′ at an output surface of the filter 78′ may also belarger in area than the apertures 85 of adjacent channels.

The remaining spectra of light that has not been reflected by the firstbandpass reflector 92 may then be transmitted or propagated from anoutput surface 101 of the first bandpass reflector 92 and propagated toan input surface 99 of a second bandpass reflector 92 which may also bein the form of a second dichroic beam splitter which is disposed alongthe input axis 74A of the device 60. A second spectral band of light maybe reflected by this second dichroic beam splitter and directed to asecond bandpass filter 78. Thereafter, the remaining spectra of lightwhich is not reflected by the second bandpass reflector 92 may betransmitted through the second bandpass reflector 92 and propagated to athird bandpass reflector 92. A third band of light may then be reflectedby this third bandpass reflector 92 and directed to a third band passfilter 78 of the demultiplexing assembly 64. This process may be carriedout for each channel of a particular device 60 and may continue until afinal spectral band is reflected from the final bandpass reflector 92 ofa final channel in the optical train of the device 60. This finalspectral band may be transmitted through the final bandpass filter 78.After the first spectral band passes through the first bandpass filter78′, the first spectral band then propagates to a first active portionof the photo detector array 62 and an amplitude thereof detected by thefirst active portion of the array 62. The intensity or amplitude of thesecond spectral band is then detected by a second active portion of thearray 62 after propagating through the second bandpass filter 78 andimpinging on active photo detector elements of the second active portionof the array.

For some embodiments, the method above may include analyzing theamplitude of the first spectral band and subsequent spectral bands toobtain an analytical result regarding the light signal. For someembodiments, a light beam may be passed through a material sample inorder to generate the light signal that enters the device 60 foranalysis. Such a light signal that has passed through the samplematerial may also be compared to a light signal that is not passedthrough a material sample such that the absorption properties of thesample material at different frequencies. In some cases, the amplitudeof the first spectral band may be detected by an isolated first activeportion of linear array which is separated from the second activeportion of the linear array by an inactive portion of the linear array.In some cases, the first spectral band may propagate from the firstbandpass reflector to an input surface of the first band pass filterover a distance of less than about 4 mm. For some embodiments, thesecond spectral band may propagate from the second bandpass reflector toan input surface of the second band pass filter over a distance of lessthan about 4.5 mm and the third spectral band propagates from the firstband pass device to the second band pass device over a distance of lessthan about 5 mm.

FIGS. 13 and 14 show a schematic cross-sectional view of anotherembodiment of a MINI DEMUX device 160 that includes 14 channels insteadof the 9 channels of the device 60 discussed above. In addition, thedevice 160 may have any or all of the same features, dimensions ormaterials as those discussed above with regard to MINI DEMUX device 60,and vice versa. As shown, the photodiode array 160 of the MINI DEMUXdevice 160 may include multiple photo detector elements 172. As shown,the photo detector elements 172 of the array are arranged linearly.Optionally, the photo detector elements 172 may be arranged in any othersuitable configuration. Further, the photodiode array 160 may include awindow 174 positioned and sealed thereon. As such, the photo detectorelements 172 may be positioned within a hermetic seal by the window 174.

A baffle subassembly 176 may be configured to support at least oneoptical filter 178 proximate to at least one photo detector element 172of the array 162. For some embodiments, each optical filter 178 may beconfigured to pass a predetermined spectral band of light which may beas broad or narrow as required for a particular desired application. Forexample, optical filter 178A may be configured to transmit light havinga wavelength of about 340 nm, while the adjacent optical filter 178B maybe configured to transmit light having a wavelength of about 380 nmtherethrough. As such, a series of optical filters 178 may be individualelements configured to individually transmit light having a band with awavelength centered at 340 nm, 380 nm, 405 nm, 510 nm, 546 nm, 578 nm,620 nm, 630 nm, 670 nm, 700 nm and 800 nm therethrough. As discussedabove, the bandwidth for the bands centered at the above wavelengths orany other set of desired wavelengths may also be adjusted as desired bythe construction of the bandpass filter elements 178 for a desiredapplication.

For some embodiments, optical filter 178′ may be configured to transmita bandwidth of the shortest wavelength of light signal therethrough,with subsequent optical filters 178 along the optical train of thedevice 160 configured to transmit light of increasing wavelengththerethrough. The bandpass filter 178′ disposed at the beginning of theDEMUX assembly 164 adjacent the aperture 166 may also be larger thanother filters and the aperture 185′ of the support baffle 182′ may alsobe larger than other apertures in order to cover more detector elementsthan adjacent channels. Coverage of a greater number of detectorelements 172 may be used in some embodiments in order to compensate fordecreased responsiveness of the detector elements 172 at certain lightsignal wavelengths. The compensation effect results because the lightsignal at the beginning of the device 160 has also been subjected toless attenuation due to reflection and absorption relative to the lightsignal that has passed through one or more bandpass reflectors or beamsplitters 192.

The MINI DEMUX device 160 may also include multiple baffles to preventor reduce measurement error. For example, the device 160 may include oneor more support baffles 180 and one or more filter baffles 184. Thesupport baffles 180 may include a support surface 182 configured toengage and support the corresponding or matched optical filter 178 andmay be configured to reduce or eliminate “bleed-by”, i.e., extraneouslight from traveling around each optical filter 178 (which couldsignificantly introduce measurement error). Further, in order tomaximize output signal, each optical filter 178 may be sized to transmitlight to one or more detector elements 172. In some cases, to helpisolate each channel (thus, preventing crosstalk), one or more inactivephoto detector elements 172A of an inactive portion of the array 162 mayseparate each one or more active photo detector elements 172B of anactive portion of the array 162, thus creating active channel regions186 and inactive channel regions 188. For some embodiments, the inactivephoto detector elements 172A may be electrically grounded in order todeactivate the elements 172A and also to cut off the drift or migrationof electrons across the semiconductor material of the inactive portionsof the array 162. As such, the connectors 168 associated with the regionmay be left coupled to ground or eliminated.

The filter baffles 184 shown in FIGS. 13 and 14 may be positionedbetween the optical filters 178. As such, the filter baffles 184 mayserve to optically isolate the optical filters 178 and active detectorregions 186 from scattered, misdirected, or unwanted light fromneighboring optical channels, thereby improving measurement accuracy.The filter baffles 184 may be manufactured from any variety of materialsin any variety of configurations as discussed above. Performance of thisdevice may exceed the performance of some current devices (linearity andcrosstalk) by about two orders of magnitude (4.5 OD as compared to 2.5OD) in some cases.

Referring still to FIGS. 13 and 14, at least one bandpass reflector 192may be positioned within the cavity 194 formed within a housing of theof the MINI DEMUX device 160. For some embodiments, the bandpassreflector 192 comprises a dichroic mirror configured to reflect a bandof light centered at a desired wavelength to the optical filter 178,while transmitting substantially all light of different wavelengthstherethrough. Any variety of suitable devices may be used as bandpassreflectors, including, without limitation, mirrors including dichroicbeam splitting mirrors, optical filters, gratings, and the like. Assuch, in some embodiments, the optical filter 178 and bandpass reflector192 may be wavelength matched, thereby transmitting a narrow bandwidthof light therethrough. As a result, the bandpass reflector 192, opticalfilter 178 and adjacent corresponding active region 186 of thephotodiode array 162 may include an optical channel. In the illustratedembodiment, the bandpass reflectors 192 may be collinearly aligned. Inalternate embodiments, the bandpass reflectors 192 need not becollinearly aligned. For example, if dichroic beam splitters are usedfor the bandpass reflectors 192, they may be offset relative to eachother in order to accommodate the displacement of each refracted portionof the light signal as discussed above.

FIG. 15 shows the cross-sectional view of an embodiment of an opticalfilter 178 for use in the MINI DEMUX device 60, 160 or any othersuitable demultiplexing embodiment discussed herein. The filter 178includes a single thin fused silica substrate 202. In some cases, thesubstrate may have a thickness of about 0.5 mm to about 1 mm, morespecifically, about 0.6 mm to about 0.8 mm, and even more specifically,about 0.7 mm, although the substrate may be manufactured from anyvariety of materials in any variety of thickness, diameters, andtransverse dimensions. One or more optical coatings 204 may be appliedto the substrate 202. Any variety of suitable materials may be used toform the optical coating with desired properties. For some embodiments,the optical coating 204 may be applied to a single surface of thesubstrate 202. For other embodiments, the optical coating 204 may beapplied to both surfaces or multiple layers of the substrate 202.Further, multiple optical coatings 204 or layers thereof may be appliedto the substrate 202.

In some cases, the optical coating 204 may include multilayer films ofhard, durable, environmentally resistant dielectric materials, such ashafnium or zirconium oxide and silicon dioxide. Unlike, prior artdevices using metal-based optical coatings, no hermetic seals arerequired to protect the device from environmental degradation. As such,substantially all light reflection may be accomplished via opticalreflection, not absorption. The resultant in-band transmission of lightwithin a desired wavelength range may therefore be much higher than anMDM type filter (about 90%). In addition, the present all-dielectricapproach may permit the DEMUX 164 to be coupled to silicon carbide-based(SiC) detectors, in addition to pure silicon-based detectors (Si).Whereas Si has spectral sensitivity up to about 1200 nm, SiC hasspectral sensitivity up to only about 425 nm (the detector device basedon SiC may be optically blind at all wavelengths longer than 425 nm). Asa result, SiC may be ideal for use with the present all-dielectricbandpass filters disclosed herein. Significantly, the cost of suchall-dielectric optical filters is far lower than the commonly used MDMbandpass optical filters.

FIG. 16 shows graphically the net optical filter/detector responsivityA/W of an embodiment of a MINI DEMUX device 60 or 160 in the typical UVrange (230 nm-320 nm). More specifically, FIG. 16 shows the performanceof an exemplary 270 nm all-dielectric filter 178, as shown in FIG. 15,when mated with a silicon carbide photodiode. At this wavelength,typical silicon carbide photodiodes may have a responsivity of about 0.1A/W. As illustrated in FIG. 16, the net responsivity of this opticalfilter/detector combination may be about 0.09 NW, almost an order ofmagnitude better than some MDM/silicon detector combination embodiments.In addition, unlike Si, SiC photo sensors are typically robust againstultraviolet light exposures, have improved field longevity and havelong-term stability.

FIG. 17 shows a cross sectional view of an embodiment of abroad-spectrum linear MINI DEMUX device. In general, the MINI DEMUXdevice 210 shown in FIG. 17 may have any of the suitable features,dimensions or materials as those of the MINI DEMUX devices 60 and 160discussed above, however, the device 210 also includes some additionalfeatures. As shown, the MINI DEMUX device 210 comprises a first DEMUXassembly or module 212 that includes an inlet aperture 215 and an outletaperture 216 having an output axis. The device 210 also includes atleast one second DEMUX assembly or module 214 which has an inletaperture 217 which is optically coupled to the outlet aperture 216 ofthe first module 212. The first and second DEMUX assemblies may bemanufactured as described above and may generally include the same orsimilar features, dimensions and materials to those of devices 60 and160. However, each DEMUX assembly 212, 214 is particularly configured todetection of discreet wavelength ranges. For example, for someembodiments, the first DEMUX assembly 212 may be configured fordetection of UV light up to a wavelength of about 380 nm, while thesecond DEMUX assembly 214 may be configured for detection of lighthaving a wavelength of about 380 nm or more. As such, the bandpassreflectors 192, filters 178, and detector elements 172 may differbetween DEMUX assembly 212 and DEMUX assembly 214.

FIG. 18 shows an embodiment of a compact multi-module demultiplexingsystem that includes a SiC linear array for a U.V. module and a Silinear photo sensor array for a visible module positioned adjacent eachother to achieve a full 230 nm-1200 nm wavelength detectionconfiguration (an infrared optical array may be employed to extend thiswavelength range to about 4500 nm). In general, the MINI DEMUX device220 shown in FIG. 18 may have any of the suitable features, dimensionsor materials as those of the MINI DEMUX devices 60 and 160 discussedabove, however, the device 220 also includes some additional features.In particular, FIG. 18 illustrates an alternative embodiment whereinmultiple DEMUX assemblies or modules may be positioned in parallel. Asshown, the MINI DEMUX device 220 includes a first DEMUX assembly 222 anda second DEMUX assembly 224. As illustrated a first bandpass reflector226 and second band pass device of reflector 228 may be used to directlight into the DEMUX assemblies 222 and 224. During use, an optical orlight signal 230 may be incident on the first bandpass reflector 226which directs light outside a selected bandpass range to the secondbandpass reflector 228. Light 232 within the bandpass range istransmitted through the first bandpass reflector 226 to the first DEMUXassembly 222. Similarly, the light 234 reflected by the first bandpassreflector 226 may be directed into the second DEMUX assembly 224 by thesecond bandpass reflector or reflector 228. Like the previousembodiment, each DEMUX assembly 222, 224 may be configured to detectlight within a discreet wavelength range. Further, any number of DEMUXassemblies may be coupled in linear or parallel configuration. Forexample, a deep UV DEMUX assembly, UV DEMUX assembly, visible lightDEMUX assembly, near IR DEMUX assembly, and far IR DEMUX assembly may becoupled in linear or parallel configuration.

FIG. 19 shows an embodiment of a compact demultiplexing system thatincludes an array of individual SiC photo sensors for a U.V. module anda Si linear photo detector array for a visible module positionedadjacent each other to achieve a full 230 nm-1200 nm wavelengthdetection configuration (an infrared optical array may be employed insome cases to extend this wavelength range to about 4500 nm). Ingeneral, the MINI DEMUX device 220′ shown in FIG. 19 may have any of thesuitable features, dimensions or materials as those of the MINI DEMUXdevices 220 discussed above, however, the device 220′ also includes someadditional features. The embodiment includes an alternative multiplexingdevice 220′ where the short wavelength module 222′ employs smalldiscreet SiC (or similar) photo sensors 172′, while the longerwavelength module 224 continues to employ the Si linear array aspreviously described. Such small sensors 172′ may for example be sealedwithin standard 5 mm TO-18 housings. Mounts, baffles and other designfeatures may mimic those of the embodiment shown in FIG. 14 anddiscussed above. This module may be produced in either, the series orcompact-parallel configurations. As a direct cost comparison, afour-channel UV module of this invention has a manufacturing cost ofabout $85 as compared to about $1000 for current-art MDM/Si sensor basedapproaches (this is in addition to the increase in signal by nearly anorder of magnitude).

With regard to the above detailed description, like reference numeralsused therein may refer to like elements that may have the same orsimilar dimensions, materials and configurations. While particular formsof embodiments have been illustrated and described, it will be apparentthat various modifications can be made without departing from the spiritand scope of the embodiments of the invention. Accordingly, it is notintended that the invention be limited by the forgoing detaileddescription.

The entirety of each patent, patent application, publication anddocument referenced herein is hereby incorporated by reference. Citationof the above patents, patent applications, publications and documents isnot an admission that any of the foregoing is pertinent prior art, nordoes it constitute any admission as to the contents or date of thesedocuments.

Modifications may be made to the foregoing embodiments without departingfrom the basic aspects of the technology. Although the technology mayhave been described in substantial detail with reference to one or morespecific embodiments, changes may be made to the embodimentsspecifically disclosed in this application, yet these modifications andimprovements are within the scope and spirit of the technology. Thetechnology illustratively described herein suitably may be practiced inthe absence of any element(s) not specifically disclosed herein. Thus,for example, in each instance herein any of the terms “comprising,”“consisting essentially of,” and “consisting of” may be replaced witheither of the other two terms. The terms and expressions which have beenemployed are used as terms of description and not of limitation and useof such terms and expressions do not exclude any equivalents of thefeatures shown and described or portions thereof and variousmodifications are possible within the scope of the technology claimed.The term “a” or “an” may refer to one of or a plurality of the elementsit modifies (e.g., “a reagent” can mean one or more reagents) unless itis contextually clear either one of the elements or more than one of theelements is described. Although the present technology has beenspecifically disclosed by representative embodiments and optionalfeatures, modification and variation of the concepts herein disclosedmay be made, and such modifications and variations may be consideredwithin the scope of this technology.

Certain embodiments of the technology are set forth in the claim(s) thatfollow(s).

What is claimed is:
 1. An optical demultiplexing device, comprising: atleast one array of photo detector elements; and a demultiplexingassembly which is optically coupled to the array, the demultiplexingassembly comprising multiple optical channels, each optical channelformed from at least one bandpass reflector and at least one opticalfilter, each bandpass reflector being disposed substantially along aninput signal axis of the demultiplexing assembly and each channelconfigured to transmit an optical signal within a selected wavelengthrange to an active portion of the array of photo detector elements whichis isolated from active portions of photo detector elements of adjacentchannels and wherein the bandpass reflector of each successive channelis offset laterally relative to an input axis of the device in order toaccommodate a lateral shift of an input signal as it passes through eachsuccessive bandpass reflector.
 2. An optical demultiplexing device,comprising: at least one array of photo detector elements; and ademultiplexing assembly which is optically coupled to the array of photodetector elements, the demultiplexing assembly comprising: a pluralityof optical channels, each optical channel formed from at least onebandpass reflector and at least one bandpass filter which is disposed inan optical filter cavity of a baffle assembly, the optical filter cavitybeing at least partially bounded by a support baffle disposed over anoutput surface of the filter and including an output aperture and afilter baffle disposed between the filter cavity and adjacent opticalchannels and wherein the bandpass reflector of each successive channelis offset laterally relative to an input axis of the device in order toaccommodate a lateral shift of an input signal as it passes through eachsuccessive bandpass reflector.
 3. An optical demultiplexing system,comprising: a first module which includes a ultraviolet light detectorarray that is configured to detect UV light but not light having awavelength greater than about 425 nm, and which includes an alldielectric filter for each optical channel of the first module; and asecond module which includes a visible light detector array that isconfigured to detect a broad band of light signal and which includes anall dielectric filter for each optical channel of the second module. 4.The system of claim 3 wherein the first module comprises ademultiplexing module including a plurality of optical channels.
 5. Thesystem of claim 3 wherein the second module comprises a demultiplexingmodule including a plurality of optical channels.
 6. The system of claim3 wherein the ultraviolet light detector array of the first modulecomprises a SiC array.
 7. The system of claim 3 wherein the visiblelight detector array of the second module comprises a Si array.
 8. Thesystem of claim 3 wherein the ultraviolet light detector array of thefirst module comprises a continuous linear array.
 9. The system of claim3 wherein the visible light detector array of the second modulecomprises a linear array.
 10. The system of claim 3 wherein the firstmodule includes an input aperture for accepting a light signal, thefirst module includes an outlet aperture configured to allow a passthrough light signal to exit the first module and wherein the secondmodule includes an in input aperture in optical communication with anoutput axis of the outlet aperture of the first module.
 11. The systemof claim 3 further comprising a bandpass reflector in opticalcommunication with an input aperture of the first module and an inputaperture of the second module and configured to split an input lightsignal such that a ultraviolet band of the light signal is directed tothe input aperture of the first module and a visible band of the lightsignal is directed to the input aperture of the second module.
 12. Thesystem of claim 3 wherein the first and second modules are less thanabout 3 inches in overall length.
 13. The system of claim 12 wherein thefirst and second modules are less than about 2 inches in overall length.